SSM4224M
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Simple drive requirement Dual N-MOSFET package
...
SSM4224M
DUAL N-CHANNEL ENHANCEMENT-MODE POWER
MOSFET
Low on-resistance Simple drive requirement Dual N-
MOSFET package
D2
D2 D1 D1
SO-8
G2 S2
G1 S1
Description
Advanced power
MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1
BV DSS R DS(ON) ID
D1 G2
S1
30V 14mΩ
10A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 30 ±20 10 8 30 2
0.016 -55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max.
Value 62.5
Unit °C/W
Rev.1.01 4/06/2004
www.SiliconStandard.com
1 of 4
SSM4224M
...
