SSM3K303T

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications 4 V drive Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDS 30 V Gate–source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.9 A 5.8 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input ca...