SSM3K302T

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8V) Ron = Ron = 87mΩ (max) (@VGS = 2.5V) 71 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristic Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 3.0 6.0 700 150 −55~150 Unit V V A mW °C °C Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3S1A absolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward tra...