SSM3K16FS

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2H1B high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Internal connections 3 3 DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the...