TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15F
SSM3K15F
High Speed Switching Applications Analog ...
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15F
SSM3K15F
High Speed Switching Applications Analog Switch Applications
Small package Low on resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Unit: mm
+0.5 2.5-0.3
+0.25 1.5-0.15
+0.1 0.4-0.05
1
2
3
2.9±0.2 1.9 0.95 0.95
0.3 +0.1 0.16-0.06
Absolute Maximum Ratings (Ta = 25°C)
+0.2 1.1-0.1
Characteristics
Symbol
Rating
Unit
0~0.1
Drain-source
voltage
VDS
30
V
Gate-source
voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
VGSS ID IDP PD Tch Tstg
±20
V
100 mA
200
200
mW
150
°C
−55 to 150
°C
S-MINI JEDEC JEITA
1.Gate 2.Source 3.Drain
TO-236MOD SC-59
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-3F1F
high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
3
3
DP
1
2
1
2
Handling Precaution
When handling individual devices ...