SSM3K123TU

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 10 4.2 8.4 800 500 150 −55~150 Unit V V A mW °C °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 2.0±0.1...