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SSM3K02T

Toshiba Semiconductor

High Speed Switching Applications


Description
SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) w w w . D a t a S h e e t 4 U . c o m Unit: mm Absolute Maximum Ratings ...



Toshiba Semiconductor

SSM3K02T

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