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SSM3J353F
Part Number
SSM3J353F
Manufacturer
Toshiba Semiconductor
Description
Silicon
P-Channel
MOSFET
Published
Mar 21, 2018
Datasheet
SSM3J353F
PDF File
Features
(1) 4.0 V gate drive
voltage
.(2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.0 A) 3.Packaging and Pin Assignm...
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SSM3J353F PDF File
SSM3J353F PDF File
