DatasheetsPDF.com

SSM2602Y Datasheet

Part Number SSM2602Y
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet SSM2602Y DatasheetSSM2602Y Datasheet (PDF)

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive Low on-resistance Surface mount package Description S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-26 package is widely used for commercial and industrial surface-mount applications. BV DSS R DS(ON) ID 20V 34mΩ 5.3A D G S Absolute Maximum Ratings Symbol .

  SSM2602Y   SSM2602Y






Part Number SSM2602GY
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Datasheet SSM2602Y DatasheetSSM2602GY Datasheet (PDF)

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive Lower on-resistance Surface mount package RoHS Compliant DESCRIPTION S D D SOT-26 G D D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial–industrial applications. BVDSS RDS(ON) ID G 20V 34mΩ 6.3A D S Pb-free; RoHS-compliant ABSO.

  SSM2602Y   SSM2602Y







Part Number SSM2602
Manufacturers Analog Devices
Logo Analog Devices
Description Low Power Audio Codec
Datasheet SSM2602Y DatasheetSSM2602 Datasheet (PDF)

Data Sheet Low Power Audio Codec SSM2602 FEATURES GENERAL DESCRIPTION Stereo, 24-bit analog-to-digital and digital-to-analog converters DAC SNR: 100 dB (A-weighted), THD: −80 dB at 48 kHz, 3.3 V ADC SNR: 90 dB (A-weighted), THD: −80 dB at 48 kHz, 3.3 V Highly efficient headphone amplifier Stereo line input and monaural microphone input Low power 7 mW stereo playback (1.8 V/1.5 V supplies) 14 mW record and playback (1.8 V/1.5 V supplies) Low supply voltages Analog: 1.8 V to 3.6 V Digital core.

  SSM2602Y   SSM2602Y







N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive Low on-resistance Surface mount package Description S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-26 package is widely used for commercial and industrial surface-mount applications. BV DSS R DS(ON) ID 20V 34mΩ 5.3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 PD @ TA=25°C Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ± 12 5.3 4.3 10 1.56 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °.


2017-04-13 : TSF65R380WT    TSF65R300S1    TSF65R190S1    TSP4N60M    TSP60R380S1    TSF60R380S1    TSP60R280S1    TSF7N60M    TSF60R280S1    TSK60R280S1   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)