SSM25G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance High peak current capability 4.5V gate driv...
SSM25G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance High peak current capability 4.5V gate drive
C C C C
SO-8
G E E E
Absolute Maximum Ratings
Symbol
Parameter
VCE Collector-Emitter
Voltage
VGE Gate-Emitter
Voltage
VGEP
Pulsed Gate-Emitter
Voltage
ICP PD @ TC=25°C1
Pulsed Collector Current Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
VCE ICP
G
Rating 450 ±6 ±8 150 2.5
-55 to 150 -55 to 150
450V 150A
C
E
Units V V V A W °C °C
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
- - 10 µA
ICES
Collector-Emitter Leakage Current (Tj=25°C)
VCE=450V, VGE=0V
- - 10 µA
VCE(sat)
Collector-Emitter Saturation
Voltage VGE=4.5V, ICP=150A (Pulsed)
- 68V
VGE(th)
Gate Threshold
Voltage
VCE=VGE, IC=250uA
0.35 - 1.2 V
Qg Total Gate Charge
IC=50A
- 64.5 - nC
Qge Ga...
