SSM2309GN P-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS...
SSM2309GN P-channel Enhancement-mode Power
MOSFET
Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION
D
G S
BV DSS R DS(ON) ID
D
The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited for low
voltage applications such as DC/DC converters and and general switching applications.
SOT-23-3
-30V 75mΩ -3.7A
S G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-a
Parameter Thermal Resistance, Junction-ambient3
Rating -30 ± 20 -3.7 -3 -12 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max.
Value 90
Unit °C/W
2/16/2005 Rev....