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SSM2304N Datasheet

Part Number SSM2304N
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Datasheet SSM2304N DatasheetSSM2304N Datasheet (PDF)

SSM2304N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount package D Description SOT-23 G Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S BV DSS R DS(ON) ID 25V 117mΩ 2.5A D Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VG.

  SSM2304N   SSM2304N






Part Number SSM2304AGN
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Datasheet SSM2304N DatasheetSSM2304AGN Datasheet (PDF)

SSM2304AGN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Lower gate charge Fast switching characteristics Description D S SOT-23-3 G BV DSS R DS(ON) ID Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The SSM2304AGN is in the SOT-23-3 package, which is widely preferred for lower power commercial and industrial surface mount applications, and.

  SSM2304N   SSM2304N







Part Number SSM2304
Manufacturers Analog Devices
Logo Analog Devices
Description 2 W Filterless Class-D Stereo Audio Amplifier
Datasheet SSM2304N DatasheetSSM2304 Datasheet (PDF)

www.DataSheet4U.com Preliminary Technical Data FEATURES Filterless Class-D amplifier with built-in output stage 2 W into 4 Ω and 1.2 W into 8 Ω at 5.0 V supply with less than 10% THD 85% efficiency at 5.0 V, 2W into 4 Ω speaker Better than 95dB SNR (signal-to-noise ratio) Available in 16-lead 3 mm × 3 mm LFCSP Single-supply operation from 2.2 V to 5.0 V 20 nA ultralow shutdown current Short-circuit and thermal protection Pop-and-click suppression Built-in resistors reduce board component count .

  SSM2304N   SSM2304N







N-channel Enhancement-mode Power MOSFET

SSM2304N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount package D Description SOT-23 G Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S BV DSS R DS(ON) ID 25V 117mΩ 2.5A D Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 G S Rating 25 ±20 2.5 2 10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 100 Unit °C/W Rev.2.02 3/11/2004 www.SiliconStandard.com 1 of 6 SSM2304N Electrical Characteristics @ Tj=25oC (u.


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