SSM09N90CGW N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
900V 1.4Ω 7.6A
Pb-free; RoHS-c...
SSM09N90CGW N-channel Enhancement-mode Power
MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
900V 1.4Ω 7.6A
Pb-free; RoHS-compliant TO-247
G D S
TO-247 (suffix W)
DESCRIPTION
The SSM09N90CGW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high
voltage applications such as AC/DC converters and offline power supplies.
The SSM09N90CGW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
EAS IAS TSTG TJ
Parameter
Drain-source
voltage
Gate-source
voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche ...