SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON) 24m £[
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Pr...
SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON) 24m £[
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
6.20 5.80 0.25 3.80 4.00 0.40 0.90 0.19 0.25
45
o
0.375 REF
0.35 0.49
1.27Typ. 4.80 5.00
0.100.25
Features
* Low on-resistance * Simple drive requirement
D1 8 D1 7 D2 6 D2 5
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1
D1
* Dual P
MOSFET Package
Date Code
4957SS
G1
1 S1 2 G1 3 S2 4 G2
G1
S1
S1
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage Gate-Source
Voltage www.DataSheet4U.com Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
-30
±20 -7.7 - 6.1 -30 2 0.016 -55~+150
Unit
V V A A A W
W/ C
o o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
Symbol
Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSG4957
Elektronische Bauelemente -7.7A, -30V,RDS(ON) 24m £[
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown
Voltage Breakdown
Voltage Temp. Coef...