SSG4401P
Elektronische Bauelemente -3.6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SOP-8
B
L
D M
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. .
N-Channel MOSFET
SSG4401P
Elektronische Bauelemente -3.6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SOP-8
B
L
D M
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.
A C
N J H G
K
F
E
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
REF. A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
REF. H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
PACKAGE INFORMATION
Package SOP-8 MPQ 2.5K Leader Size 13’ inch
S S S G
D D D D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG
Ratings
-150 ±20 -3.6 -3.1 -15 -4.1 3.1 2.2 -55 ~ 150
Unit
V V A A A A W W ° C
Continuous Source Current (Diode Conduction) Total Power Dissipation
1
TA = 25° C TA = 70° C
Operating Junction & Storage Temperature Range
Thermal Resistance Rat.