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SSF17N60A
Advanced Power MOSFET
Description
Advanced Power
MOSFET
FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 Ω (Typ.) SSF17N60A BVDSS = 600 V RDS(on) = 0.45 Ω ID = 9 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings...
Fairchild Semiconductor
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