*Customer:
SPECIFICATION
ITEM MODEL Revision Date
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CHIP LED DEVICE SSC-FB102
[Contents] 1. Feature...
*Customer:
SPECIFICATION
ITEM MODEL Revision Date
www.DataSheet4U.com
CHIP LED DEVICE SSC-FB102
[Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Characteristic diagram 5. Soldering profile 6. Outline dimension 7. Packing 8. Reel packing structure 9. Precaution for use
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Checked by
Approved by
SSC-QP-0401-06(REV.0)
SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537
SSC-FB102 Seoul Semiconductor
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1. Features
Package : 1.6×0.8×0.6 mm Untinted, Diffused flat mold Wavelength : 590 nm
2. Absolute Maximum Ratings Parameter Power Dissipation Forward Current Symbol Pd IF IFM*1 VR Topr Tstg Value 72 30 50 5 -30 ~ +85 -40 ~ +100
(Ta=25℃) Unit mW mA mA V ℃ ℃
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Peak Forward Current Reverse
Voltage
Operating Temperature Storage Temperature
*1 IFM conditions: Pulse width Tw≤ 0.1ms, Duty ratio≤ 1/10
3. Electro-Optical Characteristics Parameter Forward
Voltage Reverse Current Luminous Intensity*2 Dominant Wavelength Spectral Bandwidth Viewing angle*3 Symbol VF IR IV λ
p
(Ta=25℃) Condition IF=20mA VR=5V IF=20mA IF=20mA IF=20mA IF=20mA Min 1.9 30 582 Typ 590 20 120 Max 2.4 10 140 598 Unit V ㎂ mcd nm nm ˚
Δλ 2θ
1/2
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. *3 θ
1/2
is the off-axis where the luminous intensity is 1/2 the peak intensity.
[N...