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SS9015

Samsung

PNP EPITAXIAL SILICON TRANSISTOR

SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER • Complement to SS9014 ÎABSOLUTE MAXIMUM RA...


Samsung

SS9015

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SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER Complement to SS9014 ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG -50 -45 -5 -100 450 150 -55 ~ 150 Unit V V V mA mÎÎW TO-92 ÎELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) COB fT NF Test Conditions ÀIC = -100 , IE =0 ÀIC = -1mA, IB =0 IE = -100 , IC =0 VCB = -50V, IE =0 VEB = -5V, IC =0 VCE = -5V, IC = -1mA I...




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