WTE
POWER SEMICONDUCTORS
SR3150 – SR3200
Pb
3.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Schottky...
WTE
POWER SEMICONDUCTORS
SR3150 – SR3200
Pb
3.0A HIGH
VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak For Use in Low
Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O B D A F C H E G
Mechanical Data
Case: SMB/DO-214AA, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Device Code Weight: 0.093 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4
SMB/DO-214AA Dim Min Max A 3.30 3.94 B 4.06 4.70 C 1.91 2.11 D 0.152 0.305 E 5.08 5.59 F 2.13 2.44 G 0.051 0.203 H 0.76 1.27 All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage RMS Reverse
Voltage Average Rectified Output Current @TL = 75°C Symbol VRRM VRWM VR VR(RMS) IO
@TA=25°C unless otherwise specified
SR3150
SR3200
Unit
150 105 3.0
200 140
V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward
Voltage Peak Reverse Current At Rated DC Blocking
Voltage @IF = 3.0A @TA = 25°C @TA = 100°C
IFSM VFM IRM RθJL RθJA Tj TSTG
100 0.92 0.5 20 20 75 -65 to +125 -65 to +150
A V mA °C/W °C °C
Typical Thermal Resistance (Note...