www.vishay.com
SQJA92EP
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1 Top View
5.13 mm
D
1 2S 3S 4S G
Bottom View
FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package
80 0.0095
57 Single PowerPAK SO-8L
G
N-Channel MOSFET
S
ABSOLUTE M.
Automotive N-Channel MOSFET
www.vishay.com
SQJA92EP
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1 Top View
5.13 mm
D
1 2S 3S 4S G
Bottom View
FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package
80 0.0095
57 Single PowerPAK SO-8L
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
VDS VGS
Continuous drain current
Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TC = 125 °C
L = 0.1 mH
ID
IS IDM IAS EAS
Maximum power dissipation a
Operating junction and storage temperature range Soldering recommendations (peak temperature) c, d
TC = 25 °C TC = 125 °C.