SQJA90EP

www.vishay.com SQJA90EP Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package 80 0.0076 60 Single PowerPAK SO-8L G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage VDS VGS Continuous drain current Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TC = 125 °C L = 0.1 mH ID IS IDM IAS EAS Maximum power dissipation a Operating junction and storage temperature range Soldering recommendations (peak temperature) c, d TC = 25 °C TC = 125 °C...