www.vishay.com
SQD50N10-8m9L
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) ...
www.vishay.com
SQD50N10-8m9L
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-252
100 0.0089 0.0112
50 Single
FEATURES TrenchFET® Power
MOSFET Package with Low Thermal Resistance AEC-Q101 Qualified
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
D
Drain Connected to Tab GDS
Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G N-Channel
MOSFET S
TO-252 SQD50N10-8m9L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current
TC = 25 °Ca TC = 125 °C
VGS ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C ...