SQ1912EH

www.vishay.com SQ1912EH Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A) Configuration Package SOT-363 SC-70 Dual (6 leads) S2 G2 4 D1 5 6 20 0.280 0.360 0.450 0.8 Dual SC-70 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 G1 G2 Marking Code: 9H 1 S1 Top View 2 G1 3 D2 S1 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current a Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Tem...