SPW32N50C3

SPW32N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.11 32 P-TO247 V Ω A Type SPW32N50C3 Package P-TO247 Ordering Code Q67040-S4613 Marking 32N50C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 32 20 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 96 1100 1 20 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 284 -55... +150 Operating and storage temperature Rev. 2.0 Page 1 2004-03-16 SPW32N50C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 400 V, ID = 32 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Ze...