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SPW17N80C3 Datasheet

Part Number SPW17N80C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet SPW17N80C3 DatasheetSPW17N80C3 Datasheet (PDF)

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances SPW17N80C3 Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 0.29 Ω 88 nC PG-TO247-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application (i.e. act.

  SPW17N80C3   SPW17N80C3






Part Number SPW17N80C3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SPW17N80C3 DatasheetSPW17N80C3 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤290mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 227 Tj .

  SPW17N80C3   SPW17N80C3







Power Transistor

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances SPW17N80C3 Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 0.29 Ω 88 nC PG-TO247-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application (i.e. active clamp forward) Type SPW17N80C3 Package PG-TO247-3 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=5.


2005-09-21 : MFC8020A    MFC8021A    MFC8022A    2SC1335    M54529P    M54529AP    82530    UPD449    74S140    74S140   


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