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SPW11N60S5
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER...
INCHANGE
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