SPW11N60C2

Final data SPW11N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 600 0.38 11 P-TO247 V Ω A Type SPW11N60C2 Package P-TO247 Ordering Code Q67040-S4313 Marking 11N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 11 7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 22 340 0.6 11 6 ±20 125 -55... +150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =11A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW11N60C2 Symbol min. RthJC RthJA Tsold - Values typ. max. 1 62 1 260 Unit K/W W/K °C V(BR)DSS V(BR)DS VGS(th...