Final data
SPW11N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate ...
Final data
SPW11N60C2
Cool MOS™ Power Transistor
Feature New revolutionary high
voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 600 0.38 11
P-TO247
V Ω A
Type SPW11N60C2
Package P-TO247
Ordering Code Q67040-S4313
Marking 11N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 11 7
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =5.5A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
22 340 0.6 11 6 ±20 125 -55... +150 A V/ns V W °C mJ
Avalanche energy, repetitive tAR limited by Tjmax 1)
ID =11A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS =11A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C
Gate source
voltage Power dissipation, TC = 25°C Operating and storage temperature
Page 1
2002-10-07
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown
voltage
VGS =0V, ID =0.25mA
SPW11N60C2
Symbol min. RthJC RthJA Tsold -
Values typ. max. 1 62 1 260
Unit
K/W W/K °C
V(BR)DSS V(BR)DS VGS(th...