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SIPMOS® Power Transistor
Features • N channel
•
SPD 30N03
30 30 V A
Product Summary Drain source ...
www.DataSheet4U.com
SIPMOS® Power Transistor
Features N channel
SPD 30N03
30 30 V A
Product Summary Drain source
voltage Drain-Source on-state resistance Continuous drain current
VDS ID
Enhancement mode
RDS(on) 0.015 Ω
Avalanche rated dv/dt rated 175˚C operating temperature
Type SPD30N03 SPU30N03
Package P-TO252
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4144-A2 Tape and Reel
P-TO251-3-1 Q67040-S4146-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 kV/µs mJ Unit A
ID
TC = 25 ˚C, TC = 100 ˚C
1)
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 ˚C
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C
Gate source
voltage Power dissipation
VGS Ptot T j , Tstg
±20 120 -55... +175 55/175/56
V W ˚C
TC = 25 ˚C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
SPD 30N03
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 1.25 100 75 50 K/W Unit
RthJC RthJA RthJA
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Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown
voltage Sym...