www.DataSheet4U.com
Preliminary data
SPP18P06P SPB18P06P
SIPMOS ® Power-Transistor
Features
·
Product Summary Drain ...
www.DataSheet4U.com
Preliminary data
SPP18P06P SPB18P06P
SIPMOS ® Power-Transistor
Features
·
Product Summary Drain source
voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.13 -18.6
V
W
·
· · ·
A
Type SPP18P06P SPB18P06P
Package
Ordering Code
Pin 1 G
PIN 2/4 D
PIN 3 S
P-TO220-3-1 Q67040-S4182 P-TO263-3-2 Q67040-S4191
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Value -18.6 -13.2
Unit A
ID
T C = 25 °C T C = 100 °C
Pulsed drain current
ID puls EAS EAR
dv/dt
-74.4 150 8 6 kV/µs mJ
T C = 25 °C
Avalanche energy, single pulse
I D = -18.6 A , V DD = -25 V, RGS = 25 W
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = -18.6 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 175 °C
Gate source
voltage Power dissipation
VGS Ptot Tj , Tstg
±20 80 -55...+175 55/175/56
V W °C
T C = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
1999-11-22
Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. -
SPP18P06P SPB18P06P
Unit max. 1.85 62 62 40 K/W
RthJC RthJA RthJA
-
Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Stat...