CoolMOS® Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current...
CoolMOS® Power Transistor
Features New revolutionary high
voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPP17N80C3
800 V 0.29 Ω 88 nC
PG-TO220-3
CoolMOSTM 800V designed for: Industrial application with high DC bulk
voltage Switching Application ( i.e. active clamp forward )
Type SPP17N80C3
Package PG-TO220-3
Marking 17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
Gate source
voltage
V GS
T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V
V DS=0…640 V static
AC (f >1 Hz)
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.91
page 1
Value 17 11 51 670 0.5 17 50 ±20 ±30 227
-55 ... 150 60
Unit A
mJ
A V/ns V
W °C Ncm 2011-09-27
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
SPP17N80C3
Value 17 51 4
Unit...