DatasheetsPDF.com

SPN2346W Datasheet

Part Number SPN2346W
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN2346W DatasheetSPN2346W Datasheet (PDF)

SPN2346W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2346W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very sma.

  SPN2346W   SPN2346W






N-Channel MOSFET

SPN2346W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2346W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/6.0A,RDS(ON)=35mΩ@VGS=4.5V  20V/5.0A,RDS(ON)=40mΩ@VGS=2.5V  20V/4.0A,RDS(ON)=100mΩ@VGS=1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) 2020/01/13 Ver.3 PART MARKING S46WYW Page 1 SPN2346W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2346WS23RGB SOT-23 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2346WS23RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking S46W ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ .


2014-05-22 : KBJ1510    KBJ1508    KBJ1506    KBJ1504    KBJ1502    KBJ1501    KBJ15005    TK3P50D    C3159    C3743   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)