SPN2324

SPN2324 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2324 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2324 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/3A,RDS(ON)=310mΩ@VGS=10V  100V/1.3A,RDS(ON)=330mΩ@VGS=4.5V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) 2020/01/30 Ver.6 PART MARKING 24YW YW: Date Code Page 1 SPN2324 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2324S23RGB SOT-23 ※ SPN2324S23RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking 24 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ VGSS ID IDM PD TJ TSTG RθJA Typical 100 ±30 3.0 2.0 10 1.25 0.8 -55/150 -55/150 100 Unit V V A ...