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SPM6M080-010D Datasheet

Part Number SPM6M080-010D
Manufacturers Sensitron
Logo Sensitron
Description Three-Phase MOSFET BRIDGE
Datasheet SPM6M080-010D DatasheetSPM6M080-010D Datasheet (PDF)

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4118, Rev. C SPM6M080-010D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC O BVDSS ID IDM VGS IGSS ICSS 100 - - 80 70 200 +/-20 +/- 200.

  SPM6M080-010D   SPM6M080-010D






Three-Phase MOSFET BRIDGE

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4118, Rev. C SPM6M080-010D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC O BVDSS ID IDM VGS IGSS ICSS 100 - - 80 70 200 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V www.DataSheet4U.com Zero Gate Voltage Drain Current VDS = 100 V, VGS=0V Ti=25oC VDS= 80 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, ID= 60A, VGS = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 150 C O O 1 3 RDSon 0.009 0.018 RθJC Tjmax Tjmax -40 -55 0.012 0.65 150 150 o mA mA V C/W o o C C • 221 West Industry Court  Deer Park, NY 11729  (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 1 of 7 SPM6M080-010D SENSITRON TECHNICAL DATA Datasheet 4118, Rev. C Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 105 110 10 20 115 o C 10mV/oC o C DIODES CHARACTERISTICS Continuous Source Current, TC = 90 OC.


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