SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4113, REV A
SPM6G150-060D
Three-Phase IGBT BRIDGE, With Gate Driver a...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4113, REV A
SPM6G150-060D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown
Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter
Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate
Voltage Collector Current
www.DataSheet4U.com
BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES
O
600
-
-
V
IC
-
-
150 130
A
-
-
250 +/-20 +/- 100
A V nA
VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation
Voltage, IC = 100A, VGE = 15V, Maximum Thermal Resistance RθJC TC = 25 C
O
3 20 VCE(SAT) 1.7 2.0
mA mA V
0.25
o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5mS Maximum Thermal Resistance TC = 25 OC TC = 90 C ICM RθJC O
IC
-
-
80 60 120 0.45
o
A
A C/W
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tco Tsd 100 110 20 10 120
o
C C
o
10mV/oC
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[email protected]
SPM6G150-060D
SENSITRON TECHNICAL DATA DATASHEET 4113, REV A PARAMETE...
