SPI12N50C3

SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A Periodic avalanche rated PG-TO220-F3P-31 PG-TO262- PG-TO220 Extreme dv/dt rated 2 Ultra low effective capacitances Improved transconductance 1 23 P-TO220-3-31 P-TO220-3-1 23 1 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP12N50C3 Package PG-TO220 Ordering Code Q67040-S4579 Marking 12N50C3 SPI12N50C3 SPA12N50C3 PG-TO262 Q67040-S4578 PG-TO220FP SP000216322 12N50C3 12N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 11.6 7 34.8 340 11.61) 71) 34.8 340 0.6 0.6 11.6 11.6 ±20 ±20 ±30 ±30 125 33 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.1 Page 1 2009-11-30 SPP12N50C3 SPI12N50C3, SPA12N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 11.6 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junct...