SPI-336-99-T1

Ordering number : EN6030 SPI-336-99-T1 Infrared LED SPI-336-99-T1 Ultraminiature photoreflector supporting reflow soldering (Single transistor type) Features Infrared LED plus Phototransistor (single) DIP type Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm Visible light cut type Taping type Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C7032) Parameter Forward Current Reverse Voltage Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Collector Curren Power Dissipation Operating Temperature Storage Temperature Symbol IF VR PD VCEO VECO IC PC Topr Tstg Rating 50 5 70 20 5 20 70 -20 to +80 -30 to +100 Unit mA V mW V V mA mW °C °C Input LED Output Phototransistor Electro-Optical Characteristics at Ta=25°C, 65%RH Parameter Symbol Forward Voltage VF Input Reverse Current IR Output Dark Current ICEO Collector Output IC Leakage Current ILEAK Collector Emitter V CE(sat) Coupled Rise Time tr Fall Time tf *1 Location of reflector is shown in Fig. 1. Condition IF=10mA VR=5V IF=0mA, VCE=10V IF=10mA,VCE=5V *1 IF=10mA,VCE=5V *2 IF=10mA, IC=50µA VCC=5V, RL=100Ω IC=1mA Min. 1.0 80 Typ. 1.2 5 5 Max. 1.6 10 200 1100 1 0.5 --Unit V µA nA µA µA V µs µs AL V.E. film Glass plate (t=1mm) *2 *3 No reflector Table of Classification of Collector Output Class Ic (µA) A 1100 to 450 B 600 to 260 C 350 to 150 D 200 to 80 Fig. 1 Location of Reflector SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO...