Semiconductor
SPG1316E-H
High Brightness Chip LED
Features
• • • • • 1.6mm(L)×0.8mm(W) small size surface mount type T...
Semiconductor
SPG1316E-H
High Brightness Chip LED
Features
1.6mm(L)×0.8mm(W) small size surface mount type Thin package of 0.55mm(H) thickness Transparent clear lens optic Low power consumption type chip LED Emitting light green (530nm)
E ; ESD www.DataSheet4U.com
Protected (±2.0KV, 3 Times @100pF, 1.5KΩ)
Applications
LCD backlighting Keypad backlighting Symbol backlighting Front panel indicator lamp
Outline Dimensions
unit : mm
KSD-O8G011-001
1
SPG1316E-H
Absolute Maximum Ratings
Characteristic
Power dissipation Forward current * Peak forward current Operating temperature range Storage temperature range
2 1
(Ta=25oC)
Symbol
PD IF IFP Topr Tstg
Rating
64 20 50 -25∼80 -30∼100
Unit
mW mA mA ℃ ℃
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240℃ for 10 seconds * Soldering temperature Tsol *1. Duty ratio = 1/16, Pulse width = 0.1ms *2. Recommended reflow soldering temperature profile - Preheating 150℃ to 185℃ within 120 seconds soldering 240℃ within 10 seconds Gradual cooling (Avoid quenching) Temp (℃) 240 Peak Temp max. 240℃ Preheating area 150~185℃, 90±30sec 185 150 max. 3℃/sec max. 4℃/sec Time from 25℃ to Peak Temperature max. 6min 0 60 150 180 240 Time (sec) max. -6℃/sec max. 10sec
Solder area 220℃, max. 60sec
25
Electrical / Optical Characteristics
Characteristic
Forward
voltage
(Ta=25oC)
Symbol
VF IV
Test Condition
IF= 5mA IF= 5mA IF= 5mA IF= 5mA
Min
2.6 33 524 -
Typ
35 ±65 ±70
Max
3.2 95 536 -
Unit
V mcd nm nm deg
*4Luminous intensity
Peak wavelength S...