SPD35N10

Preliminary data SPD35N10 SIPMOS Power-Transistor Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated Product Summary VDS R DS(on) ID 100 44 35 P-TO252 V A m
Type SPD35N10 Package P-TO252 Ordering Code Q67042-S4125 Marking 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 35 26.4 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 140 245 6 ±20 150 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =35 A , VDD =25V, RGS =25
Reverse diode dv/dt IS =35A, VDS =80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-30 Preliminary data SPD35N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 1 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = - µA Zero gate voltage drain current VDS =100V, VGS=0V, Tj =25°C VDS =100V, VGS=0V, Tj ...