OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product...
OptiMOS® Power-Transistor
Feature N-Channel
Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated ° Pb-free lead plating; RoHS compliant
SPD30N03S2L-20 G
Product Summary
VDS
30 V
RDS(on)
20 mΩ
ID
30 A
PG- TO252 -3
Type
Package
Marking
SPD30N03S2L-20G PG- TO252 -3 2N03L20
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C
Gate source
voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAS EAR dv/dt
VGS Ptot
Tj , Tstg
Value
30 30 120
70
6 6
±20 60
-55... +175 55/175/56
Unit A
mJ
kV/µs V W °C
Page 1
02-09-2008
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPD30N03S2L-20 G
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
-
1.7 2.5 K/W
-
- 100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown
voltage
V(BR)DSS 30
-
-V
...
