SPD28N05L

SPD28N05L SPU28N05L SIPMOS ® Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv /dt rated 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 28 A 28 A RDS(on) 0.05 Ω 0.05 Ω Package Ordering Code SPD28N05L SPU28N05L P-TO252 P-TO251 Q67040 - S4122 - A2 Q67040 - S4114 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 28 20 Pulsed drain current TC = 25 °C IDpuls 112 EAS Avalanche energy, single pulse ID = 28 A, V DD = 25 V, RGS = 25 Ω L = 357 µH, Tj = 25 °C mJ 140 IAR EAR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 28 7.5 A mJ kV/µs dv /dt 6 VGS Ptot Gate source voltage Power dissipation TC = 25 °C ± 14 75 V W Semiconductor Group 1 30/Jan/1998 SPD28N05L SPU28N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤2 ≤ 50 ≤ 100 55 / 175 / 56 K/W ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakd...