SPD10N10

Preliminary Data SIPMOS® Power Transistor Features N channel SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.2 10 V Ω A Enhancement mode Avalanche rated dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4119-A2 Tape and Reel Q67040-S4111-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 10 6.3 40 59 4 6 ±20 40 -55... +175 55/150/56 kV/µs V W ˚C mJ Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 10 A, VDS = 0 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot T j , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 10N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 µA 0.1 10 1 100 100 nA Ω 0.15 0.2 V U...