SPD100N03S2L-04

SPD100N03S2L-04 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID 30 4.2 100 P-TO252-5-1 V mΩ A Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated Titel: C:\ARJ\VPT0916 Erstellt von: 1) Drain pin 3,6 Type Package SPD100N03S2L-04 P-TO252-5-1 Ordering Code Q67042-S4128 Marking PN03L04 Gate pin 1 n.c.: pin 2 Source pin 4,5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current2) TC=100°C Symbol ID Value 100 100 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 325 15 6 ±20 150 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 3) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD100N03S2L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4) Symbol min. RthJC RthJA - Values typ. 0.7 max. 1 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RD...