SPD02N60

Preliminary data SPD02N60 SPU02N60 SIPMOS® Power Transistor N-Channel Enhancement mode Avalanche rated www.DataSheet4U.com Pin 1 G Pin 2 D Pin 3 S Type SPD02N60 SPU02N60 VDS ID 600 V 2 A RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Ordering Code Q67040-S4133 Q67040-S4127-A2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Value 2 1.3 8 135 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current IDpulse EAS T C = 25 °C Avalanche energy, single pulse mJ I D = 2 A, VDD = 50 V, R GS = 25 Ω, T j = 25 °C Gate source voltage Power dissipation VGS Ptot Tj T stg ±20 55 -55 ... +150 -55 ... +150 55/150/56 V W °C T C = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group 1 10 / 1998 Preliminary data SPD02N60 SPU02N60 Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case www.DataSheet4U.com Symbol min. Values typ. max. 2.25 100 50 tbd - Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 600 2.1 3 4 V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current µA 0.1 10 4.2 1 100 100 5.5 nA Ω VDS = 600 V, VGS = 0 V, T j = 25 °C VDS = 600 V,...