SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on...
SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05
OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS R DS(on) ID
P- TO262 -3-1 P- TO263 -3-2
30 5.2 80
P- TO220 -3-1
V mΩ A
Enhancement mode Logic Level Excellent Gate Charge x R DS(on) product (FOM)
Superior thermal resistance
175°C operating temperature Avalanche rated dv/dt rated
Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67042-S4033 Q67042-S4032 Q67042-S4093
Marking 2N03L05 2N03L05 2N03L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 325 16 6 ±20 167 -55... +175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
mJ
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C
kV/µs V W °C
Gate source
voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-04-24
SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA -
Values typ. 0.6 max. 0.9 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Chara...