SPB80N03S2L-05

SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 5.2 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4033 Q67042-S4032 Q67042-S4093 Marking 2N03L05 2N03L05 2N03L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 325 16 6 ±20 167 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 0.6 max. 0.9 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Chara...