SPB30N03

SPP 30N03 SIPMOS® Power Transistor Features N channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A Enhancement mode RDS(on) 0.023 Ω Avalanche rated dv/dt rated 175˚C operating temperature www.DataSheet4U.com Type SPP30N03 SPB30N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4736-A2 Tube P-TO263-3-2 Q67040-S4736-A3 Tape and Reel Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 145 7.5 6 kV/µs mJ Unit A ID TC = 25 ˚C, TC = 100 ˚C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 75 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPP 30N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint www.DataSheet4U.com Symbol min. Values typ. max. 2 62 62 40 Unit RthJC RthJA RthJA - K/W @ 6 cm 2 cooling area2) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source...