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SPB07N60S5 Datasheet

Part Number SPB07N60S5
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SPB07N60S5 DatasheetSPB07N60S5 Datasheet (PDF)

Isc N-Channel MOSFET Transistor SPB07N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 7.3 4..

  SPB07N60S5   SPB07N60S5






Part Number SPB07N60S5
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPB07N60S5 DatasheetSPB07N60S5 Datasheet (PDF)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO263 Type SPB07N60S5 Package PG-TO263 Ordering Code Q67040-S4185 Marking 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalan.

  SPB07N60S5   SPB07N60S5







N-Channel MOSFET

Isc N-Channel MOSFET Transistor SPB07N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 7.3 4.6 14.6 PD Total Dissipation @TC=25℃ 83 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor SPB07N60S5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.35mA 3.5 5.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.6A 540 600 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS=0V Drain-Source Leakage Current VDS=600V; VGS= 0V;Tj=25℃ VDS=600V; VGS= 0V;Tj=150℃ Diode forward voltage ISD=7.3A, VGS = 0 V ±0.1 μA 1 100 μA 1.0 1.2 V NOTICE: ISC reserves the rights to make cha.


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