SPB-2026Z

Preliminary Product Description Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. V c c = 5V SPB-2026Z 1.7-2.2GHz 2W InGaP Amplifier Pb RoHS Compliant & Green Package SOF-26 Package Product Features P1dB = 33.8dBm @ 5V, 1960 MHz ACP = -45dBc with 25 dBm Ch. Pwr. @ 1960 MHz On-chip Input Power Detector Low Thermal Resistance Package Power up/down control < 1μs Robust Class 1C ESD Functional Block Diagram SZ P-2026 SPB-2026 RFOUT RFIN A c tiv e Bias Applications V bias = 5V Pow er Up/Dow n Control Pow er Detec tor Parameters Units Macro/Micro-Cell driver stage Pico-Cell output stage GSM, CDMA, TDSCDMA, WCDMA Single and Multi-Carrier applications Frequency Min. Typ...