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SPA15N60C3
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor SPA15N60C3 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.28Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sourc...
INCHANGE
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