SPA-2118

Product Description Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-2118 850 MHz 1 Watt Power Amplifier with Active Bias Product Features High Linearity Performance: +20.7 dBm IS-95 CDMA Channel Power at -55 dBc ACP +47 dBm typ. OIP3 VC1 VBIAS RFIN VPC2 Active Bias RFOUT/ VC2 On-chip Active Bias Control High Gain: 33 dB Typ. Patented High Reliability GaAsHBT Technology Surface-Mountable Plastic Package Applications IS-95 CDMA Systems Multi-Carrier Applications AMPS, ISM Applications Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF ICC VCC Rth j-l Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, VCC= 5.0V Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power IS-95 @880 MHz, ±885 KHz offset, POUT=20.7 dBm Small Signal Gain, 880 MHz Input VSWR Output Third Order Intercept Point Power out per tone = +14 dBm Noise Figure Device Current IBIAS = 10mA, IC1 = 70mA, IC2 = 320mA Units MHz dB m dB c dB dB m dB mA V ºC/W Min. 810 Typ. 900 29.0 -55.0 Max. ...