SPA-1218

Preliminary Product Description Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-1218 1960 MHz 1 Watt Power Amp with Active Bias VCC VBIAS RFIN www.DataSheet4U.com Active Bias Product Features On-chip Active Bias Control Patented High Reliability GaAsHBT Technology High Linearity Performance: +48dBm OIP3 Typ. Surface-Mountable Plastic Package Applications PCS Systems Multi-Carrier Applications RFOUT/ VCC Input Match N/C Symbol f0 P 1dB S 21 S11 OIP3 Icc Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, VC C =5V, Temp = 27ºC Frequency of Operati on Output Power at 1dB C ompressi on Vc1, Vbi as, Vc2 = 5.0V Small Si gnal Gai n Input VSWR Output Thi rd Order Intercept Poi nt Power out per tone = +14 dBm D evi ce C urrent, VC C = 5V Thermal Resi stance (juncti on - lead) U nits MHz dB m dB dB m mA ºC /W Min. 1930 Typ. Max. 1990 29.5 12.0 1.5:1 48.0 320 40 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes n...